Freescale Semiconductor
Technical Data
Document Number: MHW8342N
Rev. 3, 5/2006
CATV Amplifier Module
Features
•
Specified for up to 132 - Channel Loading
•
Excellent Distortion Performance
•
Superior Gain, Return Loss and DC Current Stability over Temperature
•
Silicon Bipolar Transistor Technology
•
Unconditionally Stable Under All Load Conditions
Applications
•
CATV Systems Operating in the 40 to 870 MHz Frequency Range
•
Single Module High Gain Line Amplifier in Cable TV Distribution System
Description
•
24 Vdc Supply, 40 to 870 MHz, CATV High Gain Forward Amplifier Module
•
Replaced MHW8342. There are no form, fit or function changes with this
part replacement.
•
RoHS Compliant
MHW8342N
870 MHz
35.5 dB GAIN
132 - CHANNEL
CATV AMPLIFIER MODULE
ARCHIVE INFORMATION
CASE 1302 - 01, STYLE 1
Table 1. Maximum Ratings
Rating
RF Voltage Input (Single Tone)
DC Supply Voltage
Operating Case Temperature Range
Storage Temperature Range
Symbol
V
in
V
CC
T
C
T
stg
Value
+ 55
+ 28
- 20 to +100
- 40 to +100
Unit
dBmV
Vdc
°C
°C
Table 2. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +30°C, 75
Ω
system unless otherwise noted)
Characteristic
Frequency Range
Power Gain
Slope
Gain Flatness (Peak To Valley)
Return Loss — Input
(Z
o
= 75 Ohms)
40 - 80 MHz
80 - 320 MHz
320 - 640 MHz
640 - 870 MHz
ORL
40 - 80 MHz
80 - 240 MHz
240 - 640 MHz
640 - 870 MHz
22
19
17
15
28
25
22
22
—
—
—
—
50 MHz
870 MHz
40 - 870 MHz
Symbol
BW
G
p
S
G
F
IRL
22
18
16
14
28
25
22
19
—
—
—
—
dB
Min
40
33.2
34
0.5
—
Typ
—
34
35.5
1.5
0.3
Max
870
34.8
37
2.75
0.8
Unit
MHz
dB
dB
dB
dB
Return Loss — Output
(Z
o
= 75 Ohms)
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MHW8342N
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 2. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +30°C, 75
Ω
system unless otherwise noted)
(continued)
Characteristic
Composite Second Order
(V
out
= + 44 dBmV/ch., Worst Case)
(V
out
= + 44 dBmV/ch., Worst Case)
(V
out
= + 44 dBmV/ch., Worst Case)
Cross Modulation Distortion
(V
out
= +44 dBmV, FM = 55.25 MHz)
(V
out
= +44 dBmV, FM = 55.25 MHz)
(V
out
= +44 dBmV, FM = 55.25 MHz)
Composite Triple Beat
(V
out
= + 44 dBmV/ch., Worst Case)
(V
out
= + 44 dBmV/ch., Worst Case)
(V
out
= + 44 dBmV/ch., Worst Case)
Noise Figure
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
50 MHz
550 MHz
870 MHz
Symbol
CSO
79
CSO
112
CSO
132
XMD
79
XMD
112
XMD
132
CTB
79
CTB
112
CTB
132
NF
Min
—
—
—
—
—
—
—
—
—
—
—
—
310
Typ
- 65
- 55
- 48
- 63
- 56
- 56
- 64
- 54
- 50
3.5
4.5
5.5
325
Max
- 60
- 50
- 44
dBc
- 60
- 52
- 50
dBc
- 62
- 51
- 46
4.5
—
6.5
350
dB
Unit
dBc
ARCHIVE INFORMATION
DC Current
I
DC
mA
MHW8342N
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
PACKAGE DIMENSIONS
A
Z
J
A
S
B
V
R
NOTES:
1. DIMENSIONS ARE IN INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
INCHES
MIN
MAX
−−− 1.775
−−− 1.085
−−− 0.840
0.015
0.021
0.465
0.510
0.300
0.325
0.100 BSC
0.156 BSC
0.315
0.355
1.000 BSC
0.165 BSC
0.100 BSC
0.148
0.168
−−− 0.600
1.500 BSC
0.200 BSC
−−− 0.250
0.435
−−−
0.400 BSC
0.152
0.163
0.009
0.011
MILLIMETERS
MIN
MAX
−−− 45.085
−−− 27.559
−−− 21.336
0.381
0.533
11.811 12.954
7.62
8.255
2.540 BSC
3.962 BSC
8.001
9.017
25.400 BSC
4.191 BSC
2.540 BSC
3.759
4.267
−−− 15.24
38.100 BSC
5.080 BSC
−−− 6.350
11.049
−−−
10.160 BSC
3.861
4.140
0.229
0.279
2X
Q
0.010
M
T F
M
A
M
F
F
L
2X
2X
6−32UNC−2B
U
0.010
E
M
Z T A
M
ARCHIVE INFORMATION
1 2
3
5
7 8 9
N
C
E
K
Z
W
X
T
2X
4X
G
7X
D
M
P
X
T A
M
Y
M
0.020
X
0.010
M
Z T A
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
RF INPUT
GROUND
GROUND
DELETED
VDC
DELETED
GROUND
GROUND
RF OUTPUT
CASE 1302 - 01
ISSUE E
MHW8342N
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
DIM
A
B
C
D
E
F
G
J
K
L
N
P
Q
R
S
U
V
W
X
Y
Z
ARCHIVE INFORMATION
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MHW8342N
Document Number: MHW8342N
4
Rev. 3, 5/2006
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
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